Model-Based Library for Critical Dimension Metrology by CD-SEM
نویسندگان
چکیده
In integrated circuit industry, device metrology is crucial to the future development of semiconductor industry. Critical dimension scanning electron microscope (CD-SEM) is used as a tool for the linewidth measurement and critical dimension (CD) metrology. However, the signal intensity in a secondary electron image obtained by CD-SEM is influenced not only by geometry character of specimen but also by many experimental factors, leading to difficulty for linewidth measurement directly from the image contrast. A reasonable algorithm is thus necessary for the strict linewidth metrology and dimension control by CD-SEM.
منابع مشابه
Optical Measurements of Critical Dimensions at Several Stages of the Mask Fabrication Process
Critical dimension (CD) metrology is an essential part of the mask manufacturing process. We present a metrology solution based on broadband reflectometry, covering a wavelength range from 190 to 1000 nm, in one nanometer intervals. The analysis is performed using Forouhi-Bloomer dispersion equations, in conjunctions with Rigorous Coupled Wave Analysis (RCWA). The method provides accurate and r...
متن کاملCD-SEM Metrology for sub-10 nm Width Features
This paper will explore the possibilities of critical dimension scanning electron microscope (CD-SEM) metrology at sub10 nm feature sizes using modeling. JMONSEL simulations will be used to illustrate SEM waveforms for very small features, as a function of beam energy, feature size, profile height and sidewall angle. It will also be shown that the dimensions of the electron beam and interaction...
متن کاملProgress Towards Traceable Nanoscale Optical Critical Dimension Metrology for Semiconductors
Non-imaging optical critical dimension (OCD) techniques have rapidly become a preferred method for measuring nanoscale features in semiconductors. OCD relies upon the measurement of an optical reflectance signature from a grating target as a function of angle, wavelength and/or polarization. By comparing the signature with theoretical simulations, parameters of the grating lines such as critica...
متن کاملNovel Technique for Critical Dimension Measurements of Phase-shift Masks Using Broadband Transmittance Spectra in Conjunction with RCWA
For the first time Rigorous Coupled Wave Analysis (RCWA) has been applied to the analysis of the transmittance spectra for the determination of critical dimension (CD) of phase-shift photomasks. The use of transmittance spectra proved to be instrumental in improving the sensitivity of the measurement to minor (sub-nanometer) changes in the width of the trench. We present a novel unique metrolog...
متن کاملLine edge roughness characterization of sub-50nm structures using CD-SAXS: Round-robin benchmark results
The need to characterize line edge and line width roughness in patterns with sub-50 nm critical dimension challenges existing platforms based on electron microscopy and optical scatterometry. The development of x-ray based metrology platforms provides a potential route to characterize a variety of parameters related to line edge roughness by analyzing the diffracted intensity from a periodic ar...
متن کامل